10-FZ06NBA110FP-M306L28 target datasheet flowboost0 600v/110a ps* *ps: 2x 110a parallel switch (100a igbt and 99m ? mosfet) high speed igbt with c6 mosfet and sic buck diodes high efficiency dual booster ultra fast switching frequency low inductance layout solar inverter ups 10-FZ06NBA110FP-M306L28 tj=25c, unless otherwise specified parameter symbol value unit input boost igbt t h =80c 72 t c =80c 96 t h =80c 131 t c =80c 199 t sc t j 125c 5 s v cc v ge =15v 400 v input boost fwd t h =80c 49 t c =80c 63 t h =80c 88 t c =80c 133 peak repetitive reverse voltage gate-emitter peak voltage dc forward current a t p limited by t j max a i f 210 i frm maximum junction temperature power dissipation per igbt v ge t j max p tot short circuit ratings v v a flow0 12mm housing target applications schematic types features maximum ratings condition collector-emitter break down voltage repetitive peak collector current t j max repetitive peak forward current power dissipation per diode p tot v w i cpulse i c c v rrm t j =t j max t j =t j max t j =25c t j =t j max w a 600 t j =t j max dc collector current v ce 175 maximum junction temperature c 175 600 20 400 t p limited by t j max copyright by vincotech 1 revision: 2
10-FZ06NBA110FP-M306L28 target datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition input boost mosfet t h =80c 17 t c =80c 19 t h =80c 67 t c =80c 101 thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm t c =25c 112 clearance insulation voltage creepage distance t op operation temperature under switching condition -40?+(tjmax - 25) c storage temperature t stg -40?+125 c power dissipation t j max drain to source breakdown voltage v ds dc drain current i d pulsed drain current i dpulse p tot gate-source peak voltage vgs maximum junction temperature c v a v t p limited by t j max w 600 t j =t j max a t j =t j max 150 20 copyright by vincotech 2 revision: 2
10-FZ06NBA110FP-M306L28 target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 4.1 5.1 5.7 t j =150c t j =25c 1.85 2.3 t j =150c t j =25c 40 t j =150c t j =25c 100 t j =150c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 0.72 k/w * see dynamic characteristic at mosfet t j =25c 1.55 1.75 t j =125c 1.69 t j =25c tbd. t j =125c t j =25c tbd. t j =125c t j =25c tbd. t j =125c di ( rec ) max t j =25c tbd. /d t t j =125c t j =25c tbd. t j =125c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1.10 k/w t j =25c 90 t j =150c 230 t j =25c 2.5 3 3.5 t j =125c t j =25c 100 t j =125c t j =25c 5 t j =125c t j =25c tbd. t j =125c t j =25c tbd. t j =125c t j =25c tbd. t j =125c t j =25c tbd. t j =125c t j =25c tbd. t j =125c t j =25c tbd. t j =125c ns ? v na a v ua m ? 1.05 14 154 119 total gate charge thermal resistance chip to heatsink per chip output capacitance t f turn off delay time rise time zero gate voltage drain current i dss reverse recovered charge peak reverse recovery current reverse transfer capacitance diode forward voltage gate charge input boost fwd gate to source leakage current turn on delay time input capacitance output capacitance rgon=4 ? ** static drain to source on resistance input boost mosfet 77 0.0008 100 48 15 0 pf k/w integrated gate resistor input boost igbt * gate emitter threshold voltage collector-emitter cut-off current incl. diode collector-emitter saturation voltage 99 232 192 5920 2660 61 ua v nc na ns mws mws a/ s tbd. 630 pf pf c nc conditions characteristic values value v ge(th) v ce(sat) i ces r gint gate-emitter leakage current gate threshold voltage e off turn-on energy loss per pulse fall time turn-off energy loss per pulse input capacitance gate to drain charge gate to source charge r thjh reverse recovery time reverse recovered energy peak rate of fall of recovery current erec c oss i rrm c rss v f v (gs)th i gss t r t d(off) e on q gd q gate f=1mhz i ges c iss c oss q gs v ce =v ge rgoff=1,7 ? ** q g c ies q rr t rr t d(on) r ds(on) 13 rgon=1,7 ? ** thermal grease thickness 50um = 1 w/mk f=1mhz 100 0 0 480 20 10 15 10 20 480 25 15 0 0 v ds =v gs 0 350 600 18.1 100 tj=25c 600 350 tj=25c 18.1 tj=25c tj=25c v 77 0.00121 copyright by vincotech 3 revision: 2
10-FZ06NBA110FP-M306L28 target datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max conditions characteristic values value r 25 tol. 13% tj=25c 22000 ? r 100 tol. 5% tj=100c 1486 ? tj=25c tj=25c tc=100c thermistor c value igbt gate capacitor c d r/r r100=1503 ? rated resistance* b-value b (25/100) tol. 3% deviation of r100 power dissipation p mw 200 k 3950 -5 +5 %/k nf 4.7 copyright by vincotech 4 revision: 2
10-FZ06NBA110FP-M306L28 target datasheet version ordering code in datamatrix as in packaging barcode as without thermal paste 12mm housing 10-FZ06NBA110FP-M306L28 m306l28 m306l28 outline pinout ordering code & marking ordering code and marking - outline - pinout c opyright by vincotec h 5 revision: 2
10-FZ06NBA110FP-M306L28 target datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. c opyright by vincotec h 6 revision: 2
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